Si2315DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
r
DS(on)
- On-Resistance (
W
)
0.4
I
S
- Source Current (A)
0.5
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
1
T
J
= 25_C
0.3
0.2
I
D
= 3.5 A
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.3
V
GS(th)
Variance (V)
0.2
Power (W)
0.1
0.0
- 0.1
- 0.2
- 50
I
D
= 250
mA
12
10
Single Pulse Power
8
6
4
T
A
= 25_C
2
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70850
S-31990—Rev. C, 13-Oct-03
4
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