Si2315DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
r
DS(on)
(W)
0.055 @ V
GS
= - 4.5 V
0.075 @ V
GS
= - 2.5 V
0.118 @ V
GS
= - 1.8 V
I
D
(A)
"3.5
"3
"2
TO-236
(SOT-23)
G
1
3
S
2
D
Ordering Information: Si2315DS-T1
Top View
Si2315DS (C5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
- 12
"8
"3.5
"2.8
"12
- 1.6
1.25
0.8
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board.
b. t
v5
sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70850
S-31990—Rev. C, 13-Oct-03
www.vishay.com
t
v
5 sec
Steady State
Symbol
R
thJA
Typical
130
Maximum
100
Unit
_C/W
1
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