Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
0.3
3.0
0.2
V
GS(th)
Variance (V)
I
D
= 0.25 mA
0.1
I
GSS
- (µA)
2.5
2.0
0.0
1.5
V
GS
= 4.5 V
1.0
- 0.1
- 0.2
0.5
- 0.3
- 50
- 25
0
25
50
75
100
125
0.0
- 50
- 25
0
25
50
75
100
125
T
J
- Temperature (°C)
T
J
- Temperature (°C)
Threshold Voltage Variance vs. Temperature
7
BV
GSS
- Gate-to-Source Breakdown Voltage (V)
6
5
4
3
2
1
0
- 50
I
GSS
vs. Temperature
- 25
0
25
50
75
100
125
T
J
- Temperature (°C)
BV
GSS
vs. Temperature
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 833 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
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Document Number: 71167
S-81444-Rev. C, 23-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
