Si1013R/X
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
1.2 at V
GS
= - 4.5 V
- 20
1.6 at V
GS
= - 2.5 V
2.7 at V
GS
= - 1.8 V
I
D
(mA)
- 350
- 300
- 150
FEATURES
•
Halogen-free Option Available
• High-Side Switching
•
•
•
•
•
Low On-Resistance: 1.2
Ω
Low Threshold: 0.8 V (Typ.)
Fast Switching Speed: 14 ns
1.8 V Operation
TrenchFET
®
Power MOSFETs
RoHS
COMPLIANT
• 2000 V ESD Protection
APPLICATIONS
SC-75A or SC-89
G
1
3
D
S
2
SC-75A (SOT-416):
Si1013R - Marking Code D
SC-89 (SOT-490):
Si1013X - Marking Code B
Top View
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Ordering Information:
Si1013R-T1-E3 (SC-75A, Lead (Pb)-free)
Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1013X-T1-E3 (SC-89, Lead (Pb)-free)
Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain
Current
a
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
T
J
, T
stg
ESD
P
D
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
- 275
175
90
275
160
- 55 to 150
2000
- 400
- 300
- 1000
- 250
150
80
250
140
°C
V
mW
5s
±6
- 350
- 275
mA
Steady State
- 20
Unit
V
Continuous Source Current (diode conduction)
b
Maximum Power Dissipation
b
for SC-75
Maximum Power Dissipation
b
for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Document Number: 71167
S-81444-Rev. C, 23-Jun-08
www.vishay.com
1
VISHAY [ VISHAY TELEFUNKEN ]
