VISHAY
SFH617A
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
200
P –Power Dissipation (mW)
tot
150
Phototransistor
100
50
Diode
0
0
18483
25
50
75
100
125
150
T
amb
– Ambient Temperature ( C )
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
(IR GaAs)
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Test condition
I
F
= 60 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
I
R
C
O
R
thja
Min
Typ.
1.25
0.01
13
750
Max
1.65
10
Unit
V
µA
pF
K/W
Output
(Si Phototransistor)
Parameter
Collector-emitter capacitance
Thermal resistance
Collector-emitter leakage
current
V
CE
= 10 V
SFH617A-1
SFH617A-2
SFH617A-3
SFH617A-4
Test condition
V
CE
= 5 V, f = 1.0 MHz
Part
Symbol
C
CE
R
thja
I
CEO
I
CEO
I
CEO
I
CEO
Min
Typ.
5.2
500
2.0
2.0
5.0
5.0
50
50
100
100
Max
Unit
pF
K/W
nA
nA
nA
nA
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Test condition
I
F
= 10 mA, f = 1.0 MHz
Symbol
V
CEsat
C
C
Min
0.4
Typ.
0.25
0.4
Max
Unit
V
pF
Document Number 83740
Rev. 1.4, 26-Oct-04
www.vishay.com
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