SFH617A
Vishay Semiconductors
Absolute Maximum Ratings
VISHAY
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
t
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
Unit
V
mA
A
mW
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
t
≤
1.0 ms
Power dissipation
Test condition
Symbol
V
CE
V
EC
I
C
I
C
P
diss
Value
70
7.0
50
100
150
Unit
V
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046, part 2,
Nov. 74
Creepage
Clearance
Insulation thickness between
emitter and detector
Comparative Tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s. dip soldering
distance to seating plane
≥
1.5 mm
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
≥
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83740
Rev. 1.4, 26-Oct-04
VISHAY [ VISHAY TELEFUNKEN ]
