SFH608
Vishay Semiconductors
f=1.0 MHz,C =f (V
CE
)
CE
C
=f (V ),
CB
CB
=f (V
I
I
= 0, V
= 10 V,
)
A
F
CE
= f (T
C
)
EB
EB
CEO
isfh608_12
isfh608_11
Figure 11. Transistor Capacitance
Figure 12. Collector-Emitter Leakage Current vs.Temp.
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
www.vishay.com
6
Document Number 83664
Rev. 1.4, 26-Oct-04