SFH608
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
DC Forward current
Surge forward current
Total power dissipation
IF
50
2.5
70
mA
A
t ≤ 10 µs
IFSM
Pdiss
mW
Output
Parameter
Test condition
Symbol
VCE
Value
55
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
VCBO
VEBO
IC
55
7.0
50
V
V
mA
Surge collector current
Total power dissipation
tp ≤ 1.0 ms
100
150
mA
Pdiss
mW
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage (between t = 1.0 s
emitter and detector, refer to
climate DIN 40046 part 2
Nov. 74)
VRMS
Creepage
Clearance
≥ 7.0
≥ 7.0
175
mm
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
≥ 1012
≥ 1011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Ω
Ω
V
Storage temperature range
Operating temperature range
Soldering temperature
Tstg
Tamb
Tsld
- 55 to + 150
°C
°C
°C
- 55 to + 100
260
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
www.vishay.com
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Document Number 83664
Rev. 1.4, 26-Oct-04
VISHAY [ VISHAY ]
