S1A, S1B, S1D, S1G, S1J, S1K, S1M
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Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 25 °C
10
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
1
0.01
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
Reverse Voltage (V)
Instantaneous Forward Voltage (V
)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
TJ = 125 °C
1
S1K, S1M
100
10
TJ = 75 °C
0.1
S1A thru S1J
0.01
Units Mounted on
TJ = 25 °C
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
1
0.01
0.001
0.1
1
10
100
0
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Aug-13
Document Number: 88711
3
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