MBR3035PT thru MBR3060PT
www.vishay.com
Vishay General Semiconductor
10 000
100
Instantaneous Forward Current (A)
T
J
= 150 °C
10
1
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
T
J
= 25 °C
1000
0.1
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
100
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 -
Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 -
Typical Junction Capacitance Per Diode
100
100
10
T
J
= 125 °C
1
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (mA)
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
10
0.1
T
J
= 75 °C
1
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics Per Diode
Fig. 6 -
Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
0.078 (1.98) REF.
10
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1° REF.
Both Sides
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
PIN 1
PIN 3
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Revision: 20-Nov-12
Document Number: 88676
3
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