MBR3035PT thru MBR3060PT
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 20 A
Maximum instantaneous forward
voltage per diode
V
F (1)
I
F
= 20 A
I
F
= 30 A
I
F
= 30 A
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode
I
R (1)
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
-
0.60
0.76
0.72
1.0
60
0.75
0.65
-
-
5.0
100
mA
V
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case per diode
SYMBOL
R
JC
MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
1.4
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-247AD
PREFERRED P/N
MBR3045PT-E3/45
UNIT WEIGHT (g)
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
30
300
Peak Forward Surge Current (A)
Resistive or Inductive Load
Average Forward Current (A)
24
250
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
200
18
150
12
100
6
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0
0
50
100
150
50
0
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 20-Nov-12
Document Number: 88676
2
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www.vishay.com/doc?91000
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