MBR1090CT & MBR10100CT
Vishay General Semiconductor
100
T
J
= 150 °C
10
T
J
= 100 °C
T
J
= 175 °C
1
T
J
= 25 °C
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0.01
0.1
1
10
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Transient Thermal Impedance Per Diode
100
1000
T
J
= 150 °C
T
J
= 125 °C
Instantaneous Reverse Current (mA)
Junction Capacitance (pF)
10
1
T
J
= 100 °C
0.1
100
0.01
T
J
= 25 °C
10
0.001
0.0001
0
20
40
60
80
100
1
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
Reverse
Voltage
(V)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
Document Number: 88666
Revision: 07-May-08
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www.vishay.com
3
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