MBR1090CT & MBR10100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage per diode
(1)
Maximum reverse current per diode at working peak
reverse voltage
(1)
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
I
F
= 5.0 A
I
F
= 5.0 A
T
C
= 125 °C
T
C
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
V
F
I
R
MBR1090CT
MBR10100CT
UNIT
V
µA
mA
0.75
0.85
100
6.0
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
MBR1090CT
MBR10100CT
4.4
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
PREFERRED P/N
MBR10100CT-E3/45
UNIT WEIGHT (g)
1.85
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
Resistive or Inductive Load
120
Peak Forward Surge Current (A)
Average Forward Current (A)
8
100
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
80
6
60
4
40
2
20
0
0
50
100
150
0
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88666
Revision: 07-May-08
VISHAY [ VISHAY TELEFUNKEN ]
