IRLL014, SiHLL014
Vishay Siliconix
700
600
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
T
J
= 150 °C
10
1
500
400
300
C
oss
200
100
0
10
0
10
1
C
rss
C
iss
10
0
T
J
= 25 °C
10
-1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
V
DS,
Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
V
GS
, Gate-to-Source Voltage (V)
I
D
= 10 A
10
3
5
2
6
I
D
, Drain Current (A)
V
DS
= 48 V
V
DS
= 30 V
10
2
5
2
Operation in this area limited by R
DS(on)
6
10
5
2
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
4
1
5
2
For test circuit
see figure 13
2
0
0
2
4
6
0.1
0.1
2
5
8
10
1
2
5
10
2
5
10
2
2
5
10
3
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91319
S10-1257-Rev. C, 31-May-10
VISHAY [ VISHAY TELEFUNKEN ]
