IRLL014, SiHLL014
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
I
D
, Drain Current (A)
I
D
, Drain Current (A)
V
GS
Top 7.5 V
5.0 V
4.0 V
3.5 V
3.0 V
2.75 V
Bottom 2.5 V
10
0
10
1
150 °C
10
0
10
1
10
-1
25 °C
10
-1
2.25 V
10
-2
20 µs Pulse Width
V
DS
=
25 V
2
2.5
3
3.5
4
4.5
5
10
-2
20 µs Pulse Width
T
C
=
25 °C
10
-1
10
0
10
1
10
-3
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (A)
V
GS
Top 7.5 V
5.0 V
4.0 V
10
1
3.5 V
3.0 V
2.75 V
Bottom 2.5 V
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 10 A
V
GS
= 10 V
10
0
2.25 V
10
-1
10
-2
20 µs Pulse Width
T
C
=
150 °C
10
0
10
1
10
-1
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91319
S10-1257-Rev. C, 31-May-10
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