IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
-
50
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Case
RthJA
RthJC
-
-
110
5.0
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
400
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.47
-
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
4.0
100
25
250
3.6
-
VGS
VDS = 400 V, VGS = 0 V
DS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 50 V, ID = 1.0 Ab
=
20 V
-
nA
-
Zero Gate Voltage Drain Current
IDSS
µA
V
-
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
Ω
0.97
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
170
34
6.3
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5c
V
-
-
pF
nC
12
1.9
6.5
-
ID = 2.0 A, VDS = 320 V,
see fig. 6 and 13b, c
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
7.9
9.9
21
11
-
V
R
DD = 200 V, ID = 2.0 A,
G = 24 Ω, RD = 95 Ω,
see fig. 10b, c
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
IS
-
-
-
-
1.7
6.0
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
-
-
-
-
1.6
540
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
240
0.85
ns
µC
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91272
S-81367-Rev. A, 21-Jul-08
VISHAY [ VISHAY ]
