IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
-
-
-
450
3.8
6.2
A
25
1.5
940
7.9
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 6.2 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 6.2 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. Uses IRFBC40/SiHFBC40 data and test conditions.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
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