IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
60
8.3
30
Single
D
FEATURES
600
1.2
• Surface Mount (IRFBC40S/SiHFBC40S)
• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
• Available in
SiHFBC20S)
Tape
and
Reel
(IRFBC20S,
Available
RoHS*
COMPLIANT
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
I
2
PAK (TO-262)
D
2
PAK (TO-263)
DESCRIPTION
G
G
D
S
S
N-Channel
MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC40L/SiHFBC40L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRFBC40SPbF
SiHFBC40S-E3
IRFBC40S
SiHFBC40S
D
2
PAK (TO-263)
IRFBC40STRLPbF
a
SiHFBC40STL-E3
a
IRFBC40STRL
a
SiHFBC40STL
a
I
2
PAK (TO-262)
IRFBC40LPbF
SiHFBC40L-E3
IRFBC40L
SiHFBC40L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source
Voltage
e
T
C
= 25 °C
T
C
= 100 °C
Gate-Source Voltage
e
Continuous Drain Current
Pulsed Drain Current
a,e
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Repetitive Avalanche
Current
a
T
C
= 25 °C
T
A
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
1
E
AS
I
AR
E
AR
P
D
dV/dt
V
GS
at 10 V
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 20
6.2
3.9
25
1.0
570
6.2
13
130
3.1
3.0
W/°C
mJ
A
mJ
W
V/ns
A
UNIT
V
WORK-IN-PROGRESS
VISHAY [ VISHAY TELEFUNKEN ]
