IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
10
T
J
= 150
°
C
1
T
J
= 25
°
C
1
0.1
4.5V
0.01
0.1
20µs PULSE
WIDTH
T
J
= 25
°
C
1
10
100
0.1
4.0
V
DS = 50V
20µs PULSE
WIDTH
5.0
6.0
7.0
8.0
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
2.5
I
D
= 5.0A
2.0
10
1.5
1.0
1
4.5V
0.5
0.1
1
10
20µs PULSE
WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80
100 120 140 160
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
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