IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
d
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.0 A
b
V
DS
= 50 V, I
D
= 3.0 A
d
500
-
2.0
-
-
-
-
2.8
-
0.60
-
-
-
-
-
-
-
-
4.5
± 100
25
250
1.4
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
d
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c, d
V
GS
= 10 V
I
D
= 5.0 A, V
DS
= 400 V,
see fig. 6 and 13
b, d
-
-
-
-
-
-
-
-
-
-
620
93
4.3
886
27
39
-
-
-
10
21
21
15
-
-
-
-
-
-
24
6.3
11
-
-
-
-
ns
nC
pF
V
DD
= 250 V, I
D
= 5.0 A,
R
G
= 14
Ω,
R
D
= 49
Ω,
see fig. 10
b, d
-
-
-
-
-
-
-
-
-
-
-
430
2.0
5.0
A
20
1.5
650
3.0
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 5.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.0 A, dI/dt = 100 A/µs
b, d
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
d. Uses SiHF830A data and test conditions.
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Document Number: 91062
S-81352-Rev. A, 16-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
