IRF730A, SiHF730A
Vishay Siliconix
100000
100
C, Capacitance (pF)
10000
I
SD
, Reverse Drain Current (A)
V
GS
= 0
V,
f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
TJ = 150 °C
1000
Ciss
Coss
100
1
TJ = 25 °C
10
Crss
1
1
10
100
1000
0.1
0.4
V
GS = 0
V
0.6
0.8
1.0
1.2
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 5.5 A
100
V
DS
= 320
V
V
DS
= 200
V
V
DS
=
80 V
OPERATION IN THIS AREA LIMITED
BY RDS(on)
V
GS
, Gate-to-Source
Voltage
(V)
16
I
D
, Drain Current (A)
10
us
10
100
us
12
8
1 ms
1
10 ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
TC = 25 °C
TJ = 150 °C
Single Pulse
0
0
5
10
15
20
25
0.1
10
100
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
