IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
22
5.8
9.3
Single
D
FEATURES
400
5.5
• Low Gate Charge Q
g
results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
Avalanche Voltage and Current
• Effective Coss Specified (See AN1001)
• Lead (Pb)-free Available
and
Available
RoHS*
COMPLIANT
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptible Power Supply
• High Speed Power Switching
S
G
D
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset
(Both US Line Input Only)
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF730APbF
SiHF730A-E3
IRF730A
SiHF730A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Energy
b
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
GS
I
D
I
DM
LIMIT
± 30
5.5
3.5
22
0.6
290
5.5
7.4
74
4.6
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 19 mH, R
G
= 25
Ω,
I
AS
= 5.5 A (see fig. 12).
c. I
SD
≤
5.5 A, dI/dt
≤
90 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
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