ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
lead
Test condition
I
F
= 60 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
I
R
C
O
T
thJL
Min
Typ.
1.25
0.01
25
750
Max
1.65
10
Unit
V
µA
pF
K/W
Output
Parameter
Collector-emitter capacitance
Collector-emitter leakage
current
Saturation voltage, collector-
emitter
DC forward current gain
DC forward current gain
saturated
Thermal resistance, junction to
lead
Test condition
V
CE
= 5.0 V, f = 1.0 MHz
V
VCE
= 10 V
I
CE
= 1.0 mA, I
B
= 20
µA
V
CE
= 10 V, I
B
= 20
µA
V
CE
= 0.4 V, I
B
= 20
µA
Symbol
C
CE
I
CEO
V
CESAT
HFE
HFE
sat
R
thjl
200
120
Min
Typ.
6.8
5.0
0.25
650
400
500
50
0.4
1800
600
K/W
Max
Unit
pF
nA
V
Coupler
Parameter
Capacitance (input-output)
Test condition
V
IO
= 0 V, f = 1.0 MHz
Symbol
C
IO
Min
Typ.
0.8
Max
Unit
pF
Current Transfer Ratio
Parameter
Current Transfer Ratio
(collector-emitter saturated)
Test condition
I
F
= 10 mA, V
CE
= 0.4 V
Part
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
Current Transfer Ratio
(collector-emitter)
I
F
= 10 mA, V
CE
= 10 V
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
Symbol
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
20
100
50
Min
Typ.
75
170
100
80
200
130
300
500
400
Max
Unit
%
%
%
%
%
%
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
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