ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
1.3
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter reverse voltage
Test condition
Part
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
Collector current
t < 1.0 ms
Power dissipation
Derate linearly from 25 °C
Symbol
V
CER
V
CER
V
CER
V
CER
V
CER
V
CER
I
C
I
C
P
diss
Value
50
50
70
70
70
70
50
400
200
2.6
Unit
V
V
V
V
V
V
mA
mA
mW
mW/°C
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
Creepage
Clearance
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Package power dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
2.0 mm from case bottom
T
stg
T
amb
T
j
T
sld
R
IO
R
IO
P
tot
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
10
12
10
11
250
3.3
- 40 to + 150
- 40 to + 100
100
260
mm
mm
Ω
Ω
mW
mW/°C
°C
°C
°C
°C
www.vishay.com
2
Document Number 83646
Rev. 1.4, 05-Nov-04
VISHAY [ VISHAY TELEFUNKEN ]
