ESH3B, ESH3C & ESH3D
Vishay General Semiconductor
1000
100
TJ = 175 °C
10
1
TJ = 150 °C
TJ = 125 °C
100
10
1
TJ = 25 °C
0.10
0.01
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
10
1
T
J
= 175 °C
= 150 °C
J = 125 °C
T
J
100
10
T
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package dimensions in inches (millimeters)
DO-214AB (SMC)
Mounting Pad Layout
Cathode Band
0.185 MAX.
(4.69 MAX.)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 MIN.
(3.20 MIN.)
0.280 (7.11)
0.060 MIN.
(1.52 MIN.)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.320 REF
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number 84648
17-Oct-05
www.vishay.com
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