DG540/541/542
Vishay Siliconix
TEST CIRCUITS
+15 V
V+
3V
S
IN
GND
V–
R
L
1 kW
D
V
O
C
L
35 pF
Logic
Input
3V
50%
t
r
<20 ns
t
f
<20 ns
Switch
Input
Switch
Output
V
S
90%
0
t
ON
t
OFF
–3 V
C
L
(includes fixture and stray capacitance)
R
L
V
O
= V
S
R
L
+ r
DS(on)
FIGURE 2.
Switching Time
+15 V
V+
S
IN
3V
GND
V–
D
V
O
C
L
1000 pF
IN
X
ON
DV
O
R
g
V
O
V
g
OFF
ON
–3 V
DV
O
= measured voltage error due to charge injection
The charge injection in coulombs is
DQ
= C
L
x DV
O
FIGURE 3.
Charge Injection
C
+15 V
C
V+
+15 V
V
S
R
g
= 75
W
0 V, 2.4 V
S
D
V
O
V
S
R
g
= 50
W
0 V, 2.4 V
S
V+
D
V
O
IN
GND
V–
C
R
L
75
W
IN
GND
V–
R
L
50
W
C
–3 V
Off Isolation = 20 log
C = RF Bypass
V
S
V
O
–3 V
FIGURE 4.
Off Isolation
FIGURE 5.
Bandwidth
Document Number: 70055
S-00399—Rev. G, 13-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
4-7
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