DG535/536
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
9
8
7
V th (V)
6
I+ (µA)
5
4
3
2
2
1
0
8
10
12
14
16
18
V+ – Positive Supply (V)
0
10
11
12
13
14
15
16
17
18
V+ – Positive Supply (V)
GND = 0 V
T
A
= 25 °C
14
12
10
125 °C
8
25 °C
6
4
- 55 °C
GND = 0 V
Logic Input Switching Threshold
vs. Supply Voltage (V+)
1 µA
100 nA
V+ = + 15 V
GND = 0 V
V
D
= V
S
= 3 V
I S, I D – Leakage
1 µA
100 nA
Supply Current vs.
Supply Voltage and Temperature
V+ = + 15 V
GND = 0 V
I
D(off)
I
S(off)
I D(on) – Leakage
10 nA
10 nA
1 nA
1 nA
100 pA
100 pA
10 pA
10 pA
1 pA
- 55
- 35
- 15
5
25
45
65
85
105 125
1 pA
- 55
- 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Temperature (°C)
I
D(on)
vs. Temperature
- 120
DG536
R
IN
= 10
Ω
-4
0
Leakage Current vs. Temperature
- 100
DG536
X TALK(AI) (dB)
- 80
DG536
R
IN
= 75
Ω
Insertion Loss (dB)
-8
- 3 dB Points
- 12
Test Circuit
See Figure 6
R
L
= 50
Ω
- 60
DG535
R
IN
= 10
Ω
- 40
- 16
- 20
Test Circuit
See Figure 10
- 20
0.1
1
10
100
1
DG535
0
f – Frequency (MHz)
10
100
1000
f – Frequency (MHz)
Adjacent Input Crosstalk vs. Frequency
- 3 dB Bandwidth Insertion Loss vs. Frequency
Document Number: 70070
S-71241–Rev. E, 25-Jun-07
www.vishay.com
5
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