DG444B, DG445B
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
250
R
DS(on) – Drain-Source On-Resistance (Ω)
225
200
20
I
S
, I
D
- Current (pA)
175
150
125
10 V
100
75
50
25
0
0
2
4
6
8
10
12
V
D
– Drain Voltage (V)
14
16
- 30
- 40
- 20
12 V
15 V
7V
10
0
- 10
- 20
I
S(off)
, I
D(off)
I
D(on)
V+ = 5 V
40
30
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
- 15
- 10 - 5
0
5
10
V
ANALOG
– Analog Voltage (V)
15
20
R
DS(on)
vs. V
D
and Single Power Supply Voltages
1 nA
V+ = 15 V
V- = - 15 V
V
S,
V
D
= - 14 V
30
Leakage Currents vs. Analog Voltage
20
Q – Charge (pC)
I
S
, I
D
- Current
100 pA
10
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
- 10
0
I
S(off)
, I
D(off)
10 pA
- 20
1 pA
- 55
- 35
- 15
5
25
45
65
Temperature (°C)
85
105 125
- 30
- 15
- 10
-5
0
5
V
ANALOG
– Analog Voltage (V)
10
15
Leakage Current vs. Temperature
120
110
100
90
Q
S
, Q
D
- Charge Injection vs. Analog Voltage
V+ = + 15 V
V- = - 15 V
OIRR (dB)
R
L
= 50
Ω
80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
Off Isolation vs. Frequency
Document Number: 72626
S11-1350-Rev. B, 04-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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