DG444B, DG445B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
V+ to V-
GND to V-
V
L
Digital Inputs
a
, V
S
, V
D
Continuous Current (Any Terminal)
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
16-pin Plastic DIP
c
Power Dissipation (Package)
b
16-pin Narrow Body SOIC
d
QFN-16
Symbol
Limit
44
25
(GND - 0.3 V) to (V+) + 0.3 V
(V-) - 2 to (V+) + 2 or
30 mA, whichever occurs first
30
100
- 65 to 125
470
640
850
mW
mA
°C
V
Unit
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 8 mW/°C above 75 °C.
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2
Document Number: 72626
S11-1350-Rev. B, 04-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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