DG411, DG412, DG413
Vishay Siliconix
TEST CIRCUITS
+5V
+ 15 V
Logic
Input
V
L
V
S1
V
S2
S
1
IN
1
S
2
IN
2
GND
V-
D
2
V
O2
Switch
Output
R
L1
300
R
L2
300
C
L2
35 pF
C
L1
35 pF
Switch
Output
0V
V
S2
V
O2
0V
V+
D
1
V
O1
3V
50 %
0V
V
S1
V
O1
90 %
90 %
t
D
t
D
- 15 V
C
L
(includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413)
V
O
+5V
+ 15 V
V
O
IN
X
OFF
V
O
C
L
10 nF
V-
IN
X
OFF
ON
Q =
V
O
x C
L
OFF
ON
OFF
R
g
V
L
S
IN
V+
D
V
g
3V
GND
- 15 V
IN
X
dependent on switch configuration Input polarity determined
by sense of switch.
Figure 4. Charge Injection
C
+5V
+ 15 V
C
V
L
V
S
R
g
= 50
0 V, 2.4 V
S
2
NC
IN
2
GND
V
S
V
O
V-
S
1
IN
1
V+
D
1
50
D
2
R
L
C
V
O
0 V, 2.4 V
X
TA LK
Isolation = 20 log
C = RF bypass
- 15 V
Figure 5. Crosstalk
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
7
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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