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DG411DY-T1-E3 参数 Datasheet PDF下载

DG411DY-T1-E3图片预览
型号: DG411DY-T1-E3
PDF下载: 下载PDF文件 查看货源
内容描述: 精密单片四路SPST CMOS模拟开关 [Precision Monolithic Quad SPST CMOS Analog Switches]
分类和应用: 开关
文件页数/大小: 14 页 / 204 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号DG411DY-T1-E3的Datasheet PDF文件第1页浏览型号DG411DY-T1-E3的Datasheet PDF文件第2页浏览型号DG411DY-T1-E3的Datasheet PDF文件第3页浏览型号DG411DY-T1-E3的Datasheet PDF文件第5页浏览型号DG411DY-T1-E3的Datasheet PDF文件第6页浏览型号DG411DY-T1-E3的Datasheet PDF文件第7页浏览型号DG411DY-T1-E3的Datasheet PDF文件第8页浏览型号DG411DY-T1-E3的Datasheet PDF文件第9页  
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONS
a
(for Unipolar Supplies)
Parameter
Analog Switch
V
ANALOG
Analog Signal Range
e
Drain-Source
R
DS(on)
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
V + = 13.5 V, V
IN
= 0 V or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-5
1
5
-1
-5
1
5
1
5
µA
t
ON
t
OFF
t
D
Q
Full
V + = 10.8 V,
I
S
= - 10 mA, V
D
=
3
V, 8 V
Room
Full
Room
Hot
Room
Hot
Room
Room
40
12
80
100
250
400
125
140
12
80
100
250
315
125
140
V
Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
Min.
d
D Suffix
- 40 °C to 85 °C
Min.
d
Unit
Max.
d
Max.
d
175
95
25
25
R
L
= 300
,
C
L
= 35 pF
V
S
=
8
V, see figure 2
DG413 only, V
S
= 8 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 6 V, R
g
= 0
,
C
L
= 10 nF
ns
pC
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
300
T
A
= 25 °C
±5
V
250
V+ = 3 V
V
L
= 3 V
V
L
= 5 V
R
DS(on)
- Drain-Source On-Resistance (Ω)
45
40
35
30
25
20
15
10
5
0
- 20
±
8V
± 10
V
± 15
V
± 12
V
200
150
V
V+ = 5 V
100
± 20
V
50
8V
12 V
15 V
20 V
0
- 15
- 10
-5
0
5
10
15
20
0
2
4
V
D
- Drain
V
oltage (V)
6
8
10 12 14
V
D
- Drain Voltage (V)
16
18
20
On-Resistance vs. V
D
and Power Supply Voltage
On-Resistance vs. V
D
and Unipolar Supply Voltage
www.vishay.com
4
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000