BYV26
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
Symbol
R
thJA
Value
45
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
I
F
= 1 A
I
F
= 1 A, T
j
= 175 °C
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
R
= 100
µA
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYV26A-
BYV26C
BYV26D-
BYV26E
Test condition
Part
Symbol
V
F
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
t
rr
300
500
700
900
1100
30
75
Min
Typ.
Max
2.5
1.3
5
100
Unit
V
V
µA
µA
V
V
V
V
V
ns
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P - Maximum Reverse Power Dissipation (mW
R
600
V
R
= V
RRM
500
400
R
thJA
= 100 K/W
300
600V
200
100
1000V
0
0
40
80
120
160
200
T
j
– Junction Temperature (° C )
800V
I
R
- Reverse Current (
µA
)
1000
V
R
= V
RRM
R
thJA
= 45 K/W
200V
400V
100
10
1
0
95 9729
40
80
120
160
200
95 9728
T
j
– Junction Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Max. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86040
Rev. 1.6, 14-Apr-05
VISHAY [ VISHAY TELEFUNKEN ]
