BYV26
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Very low switching losses
Low reverse current
High reverse voltage
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Switched mode power supplies
High-frequency inverter circuits
Mechanical Data
Case:
SOD-57 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 369 mg
Parts Table
Part
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Type differentiation
V
R
= 200 V; I
FAV
= 1 A
V
R
= 400 V; I
FAV
= 1 A
V
R
= 600 V; I
FAV
= 1 A
V
R
= 800 V; I
FAV
= 1 A
V
R
= 1000 V; I
FAV
= 1 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
I
(BR)R
= 1 A, inductive load
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
E
R
T
j
= T
stg
Value
200
400
600
800
1000
30
1
10
- 55 to + 175
Unit
V
V
V
V
V
A
A
mJ
°C
Document Number 86040
Rev. 1.6, 14-Apr-05
www.vishay.com
1
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