BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
15
Resistive or Inductive Load
1000
Instantaneous Reverse Current (μA)
T
J
= 125 °C
T
J
= 100 °C
Average Forward Current (A)
100
10
10
5
1
T
J
= 25 °C
0
0
50
100
150
0.1
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
Peak Forward
Surge
Current (A)
T
C
= 105 °C
8.3 ms
Single
Half
Sine-Wave
Stored
Charge/Reverse Recovery Time
(nC/ns)
100
50
40
at 2 A, 20 A/μs
30
at 1 A, 100 A/μs
20
at 5 A, 50 A/μs
at 5 A, 50 A/μs
10
at 1 A, 100 A/μs
10
at 2 A, 20 A/μs
0
25
50
75
100
125
t
rr
Q
rr
1
1
10
100
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
100
100
Pulse Width = 300 μs
1 % Duty Cycle
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
T
J
= 125 °C
1
T
J
= 100 °C
Junction Capacitance (pF)
10
0.1
T
J
= 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 02-Sep-13
Document Number: 88549
3
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