BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
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Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
TO-220AB
ITO-220AB
2
1
BYQ28E, UG10
PIN 1
PIN 3
PIN 2
CASE
3
1
BYQ28EF, UGF10
PIN 1
PIN 3
PIN 2
2
3
TO-263AB
K
Power pack
Available
Glass passivated chip junction
Ultrafast recovery times
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
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•
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•
•
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TYPICAL APPLICATIONS
2
1
BYQ28EB, UGB10
PIN 1
PIN 2
K
HEATSINK
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commerical grade
Base P/NHE3 - RoHS-compliant, automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
2 x 5.0 A
100 V to 200 V
55 A
25 ns
0.895 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Common cathode
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive peak reverse current per diode at t
p
= 100 μs
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RSM
V
C
T
J
, T
STG
V
AC
UG10BCT
100
100
100
UG10CCT
150
150
150
10
5.0
55
0.2
8
- 40 to + 150
1500
UG10DCT
200
200
200
BYQ28E-100 BYQ28E-150 BYQ28E-200
UNIT
V
V
V
A
A
A
kV
°C
V
Revision: 02-Sep-13
Document Number: 88549
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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