BF998/BF998R/BF998RW
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
300
P
tot
– Total Power Dissipation ( mW )
20
250
I
D
– Drain Current ( mA )
16
12
8
0
4
V
G1S
= –1V
0
0
96 12159
4V
V
DS
= 8V
5V
3V
2V
1V
200
150
100
50
20
40
60
80
100 120 140 160
12817
0
–0.6
–0.2
0.2
0.6
1.0
1.4
T
amb
– Ambient Temperature (
°C
)
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
30
25
I
D
– Drain Current ( mA )
20
15
10
5
0
0
12812
Figure 4. Drain Current vs. Gate 2 Source Voltage
3.0
V
G2S
= 4V
V
G1S
= 0.6V
C
issg1
– Gate 1 Input Capacitance ( pF )
2.5
2.0
1.5
1.0
0.5
0
–2
V
DS
=8V
V
G2S
=4V
f=1MHz
0.4V
0.2V
0
–0.2V
–0.4V
2
4
6
8
10
–1.5 –1.0 –0.5
0.0
0.5
1.0
1.5
V
DS
– Drain Source Voltage ( V )
12863
V
G1S
– Gate 1 Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
3.0
C
oss
– Output Capacitance ( pF )
20
V
DS
= 8V
I
D
– Drain Current ( mA )
16
12
8
4
0
–0.8
12816
6V
5V
4V
3V
2V
1V
2.5
2.0
1.5
1.0
0.5
0
V
G2S
=4V
f=1MHz
0
V
G2S
=–1V
–0.4
0.0
0.4
0.8
1.2
2
12864
4
6
8
10
12
V
G1S
– Gate 1 Source Voltage ( V )
V
DS
– Drain Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
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4 (9)
Document Number 85011
Rev. 4, 23-Jun-99
VISHAY [ VISHAY TELEFUNKEN ]
