BAS85
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
200
P
R
– Reverse Power Dissipation ( mW )
180
160
140
120
100
80
60
40
20
0
25
15822
1000
V
R
= 30 V
I
F
– Forward Current ( A )
100
T
j
= 150°C
R
thJA
=
540K/W
P
R
–Limit
@100%V
R
T
j
= 25°C
10
P
R
–Limit
@80%V
R
1
0.1
50
75
100
125
150
15824
0
0.5
1.0
1.5
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
V
R
= V
RRM
Figure 3. Forward Current vs. Forward Voltage
10
9
C
D
– Diode Capacitance ( pF )
8
7
6
5
4
3
2
1
0
0.1
15825
f=1MHz
I
R
– Reverse Current (
m
A )
100
10
1
25
15823
50
75
100
125
150
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.de
•
FaxBack +1-408-970-5600
2 (4)
Document Number 85510
Rev. 3, 01-April-99
VISHAY [ VISHAY TELEFUNKEN ]
