BAS85
Vishay Telefunken
Schottky Barrier Diode
Features
D
Integrated protection ring against
static discharge
D
Very low forward voltage
Applications
Applications where a very low forward voltage
is required
94 9371
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
t
p
=10 ms
t
p
≤1s
V
RWM
=25V
Type
Symbol
V
R
I
FSM
I
FRM
I
F
I
FAV
T
j
T
stg
Value
30
5
300
200
200
125
–65...+150
Unit
V
A
mA
mA
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
320
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Test Conditions
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V, t
p
=300
m
s
V
R
=1V, f=1MHz
Type
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
C
D
Min
Typ
Max
240
320
400
500
800
2.3
10
Unit
mV
mV
mV
mV
mV
m
A
pF
Reverse current
Diode capacitance
Document Number 85510
Rev. 3, 01-Apr-99
www.vishay.de
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