4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Capacitance
1)
1)
Test condition
I
F
= 50 mA
V
R
= 3.0 V
V
R
= 0 V
Symbol
V
F
I
R
C
O
Min
Typ.
1.3
0.1
25
Max
1.5
100
Unit
V
µA
pF
Reverse current
1)
Indicates JEDEC registered values
Output
Parameter
Collector-base breakdown
voltage
1)
Collector-emitter breakdown
voltage
1)
Emitter-collector breakdown
voltage
1)
I
CEO
(dark)
1)
V
CE
= 10 V, (base open)
4N25
4N26
4N27
4N28
I
CBO
(dark)
1)
Collector-emitter capacitance
1)
Test condition
I
C
= 100
µA
I
C
= 1.0 mA
I
E
= 100
µA
Part
Symbol
BV
CBO
BV
CEO
BV
ECO
Min
70
30
7.0
Typ.
Max
Unit
V
V
V
5.0
5.0
5.0
10
2.0
C
CE
6.0
50
50
50
100
20
nA
nA
nA
nA
nA
pF
V
CB
= 10 V, (emitter open)
V
CE
= 0
Indicates JEDEC registered values
Coupler
Parameter
Isolation voltage
1)
Test condition
Peak, 60 Hz
Part
4N25
4N26
4N27
4N28
Symbol
V
IO
V
IO
V
IO
V
IO
V
CE(sat)
R
IO
C
IO
Min
2500
1500
1500
500
Typ.
Max
Unit
V
V
V
V
Saturation voltage, collector-
emitter
Resistance, input output
1)
Capacitance (input-output)
1)
I
CE
= 2.0 mA, I
F
= 50 mA
V
IO
= 500 V
f = 1.0 MHz
0.5
100
0.5
V
GΩ
pF
Indicates JEDEC registered values
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
1)
Test condition
V
CE
= 10 V, I
F
= 10 mA
Part
4N25
4N26
4N27
4N28
1)
Symbol
CTR
DC
CTR
DC
CTR
DC
CTR
DC
Min
20
20
10
10
Typ.
50
50
30
30
Max
Unit
%
%
%
%
Indicates JEDEC registered value
Document Number 83725
Rev. 1.4, 26-Jan-05
www.vishay.com
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