4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
t < 10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
Unit
V
mA
A
mW
Output
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector current
Collector currrent
Power dissipation
t < 1.0 ms
Test condition
Symbol
V
CEO
V
EBO
I
C
I
C
P
diss
Value
70
7.0
50
100
150
Unit
V
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index
Isolation resistance
DIN IEC 112/VDE0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
max.10 s, dip soldering:
distance to seating plane
≥
1.5 mm
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
Symbol
V
ISO
Value
5300
≥
7.0
≥
7.0
≥
0.4
175
10
12
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
Unit
V
RMS
mm
mm
mm
www.vishay.com
2
Document Number 83725
Rev. 1.4, 26-Jan-05
VISHAY [ VISHAY TELEFUNKEN ]
