V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Output Inverter
Figure 9
Output inverter FRED diode
Figure 10
Output inverter FRED diode
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Typical reverse recovery current as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
IRRM = f(Rgon)
0,6
30
0,5
0,4
0,3
0,2
0,1
25
20
15
10
5
0
0
0
0
R Gon ( Ω )
30
60
90
120
150
R Gon ( Ω )
30
60
90
120
150
At
At
Tj =
VR =
IF =
Tj =
VR =
IF =
125
600
8
°C
V
125
°C
V
600
8
A
A
VGE
=
VGE =
±15
V
±15
V
Figure 11
Output inverter FRED diode
Figure 12
Typical rate of fall of forward
Output inverter FRED diode
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
and reverse recovery current as a
Q
rr = f(Rgon)
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
2
3000
2500
1,6
1,2
0,8
0,4
dI0/dt
2000
1500
1000
500
dIrec/dt
0
0
0
R Gon ( Ω)
0
30
60
90
120
150
R Gon ( Ω)
30
60
90
120
150
At
At
Tj =
VR =
IF =
Tj =
VR =
IF =
125
600
8
°C
V
125
600
8
°C
V
A
A
VGE
=
VGE =
±15
V
±15
V
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