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V23990-P849-C59-PM 参数 Datasheet PDF下载

V23990-P849-C59-PM图片预览
型号: V23990-P849-C59-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 20 页 / 1305 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P849-A58/A59/C58/C59-PM  
preliminary datasheet  
Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(Ic)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
1,5  
1,25  
1
1,5  
1,25  
1
Eon  
Eon  
Eoff  
Erec  
0,75  
0,5  
0,25  
0
0,75  
0,5  
0,25  
0
Eoff  
Erec  
R G( Ω )  
I C (A)  
0
30  
60  
90  
120  
150  
0
4
8
12  
16  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
125  
600  
±15  
32  
°C  
V
125  
600  
±15  
8
°C  
V
=
=
=
=
V
V
Rgon  
Rgoff  
=
=
A
32  
Figure 7  
Output inverter IGBT  
Figure 8  
Output inverter IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1
1
tdoff  
tdon  
tdoff  
tf  
tf  
tr  
0,1  
0,1  
tdon  
tr  
0,01  
0,01  
0,001  
0,001  
R G ( Ω )  
0
30  
60  
90  
120  
150  
0
4
8
12  
16  
IC (A)  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
125  
600  
±15  
32  
°C  
V
125  
600  
±15  
8
°C  
V
=
=
=
=
V
V
Rgon  
Rgoff  
=
=
A
32  
copyright Vincotech  
6
Revision: 2