V23990-P649-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
BRC inverse diode
Diode forward voltage
Reverse leakage current
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,65
1,58
2,3
VF
Ir
3
V
250
1200
μA
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
RthJH
3,8
K/W
K/W
RthJC
n.A.
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,75
1,69
2,4
VF
Ir
Diode forward voltage
25
V
μA
250
Reverse leakage current
1200
600
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
44,2
196
ns
R
gon=32Ω
Rgoff=16Ω
Qrr
Reverse recovered charge
15
25
μC
3,44
2371
di(rec)max
/dt
Peak rate of fall of reverse recovery current
Reverse recovery energy
A/μs
mWs
K/W
K/W
Erec
RthJH
RthJC
1,34
2,11
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
n.A.
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