V23990-P649-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,001
25
V
V
1,3
1,63
1,84
15
0
0,25
650
1200
0
mA
nA
20
8
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
53
21
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=32Ω
617
183
1,97
15
600
25
Rgoff=16Ω
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
2,85
Cies
1,808
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
0,095
0,082
155
nF
Reverse transfer capacitance
Gate charge
nF
15
960
25
nC
K/W
K/W
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,24
n.A.
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5
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