V23990-P640-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,7
1,68
2,4
VF
Ir
Diode forward voltage
35
V
mA
A
250
Reverse leakage current
1200
600
IRRM
trr
Peak reverse recovery current
Reverse recovery time
56,4
279
ns
Rgon=32Ohm
Rgoff=16Ohm
Qrr
Reverse recovered charge
15
35
mC
A/ms
mWs
K/W
K/W
5,15
2460
di(rec)max
/dt
Peak rate of fall of reverse recovery current
Reverse recovery energy
Erec
RthJH
RthJC
1,94
1,86
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
n.A.
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