V23990-P640-G10/H10-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Input Rectifier Bridge
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1
1,17
1,13
0,91
0,78
3
1,5
VF
Vto
rt
Forward voltage
75
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
mΩ
mA
K/W
5
0,5
1,5
Ir
1500
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
1,04
n.A.
Input Rectifier Thyristor
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=130°C
Tj=25°C
Tj=115°C
1
1,37
1,45
0,94
0,86
6
2
VF
Vto
75
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
rt
mΩ
mA
ms
ms
V/μs
A/μs
ms
mA
mA
V
8
0,2
Ir
1
2
tGD
Gate controlled delay time
Gate controlled rise time
Ig=1A dig/dt=1A/s
Ig=1A dig/dt=1A/s
1072
1072
tGR
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit-commutated turn-off time
Holding current
(dv/dt)cr
(di/dt)cr
tq
1000
50
150
165
330
1,98
100
IH
IL
Latching current
VGT
IGT
VGD
IGD
Gate trigger voltage
Gate trigger current
A
Gate non-trigger voltage
V
0,25
6
Gate non-trigger current
A
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermal grease
thickness ≤50um λ=
0.61W/mK
1,12
n.A.
K/W
K/W
Copyright by Vincotech
4
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