V23990ꢀP629ꢀL48ꢀPM V23990ꢀP629ꢀL48YꢀPM
V23990ꢀP629ꢀL49ꢀPM V23990ꢀP629ꢀL49YꢀPM
datasheet
INPUT BOOST
Figure 13
BOOST FWD
Figure 14
BOOST FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
0,08
0,06
0,04
0,02
0,00
0,08
Qrr High T
0,06
0,04
0,02
Qrr Low T
Qrr High T
Qrr Low T
0,00
0
I C (A)
80
16
32
48
64
R Gon ( Ω) 80
0
20
40
60
At
At
At
T j =
T j =
V R =
I F =
25/125
700
°C
V
25/125
700
°C
V
V CE
V GE
=
=
±15
16
V
40
A
R gon
=
ꢁ
V GS
=
±15
V
Figure 15
BOOST FWD
Figure 16
BOOST FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
20
16
12
8
20
16
12
8
IRRM High T
IRRM Low T
IRRM High T
4
4
IRRM Low T
0
0
0
0
20
40
60
I C (A) 80
16
32
48
64
R Gon (Ω)
80
At
T j =
At
T j =
V R =
I F =
25/125
°C
V
25/125
700
°C
V
V CE
V GE
R gon
=
700
±15
16
=
V
40
A
=
V GE =
ꢁ
±15
V
copyright Vincotech
8
11 Sep. 2015 / Revision 3
VINCOTECH [ VINCOTECH ]
