V23990ꢀP629ꢀL48ꢀPM V23990ꢀP629ꢀL48YꢀPM
V23990ꢀP629ꢀL49ꢀPM V23990ꢀP629ꢀL49YꢀPM
datasheet
INPUT BOOST
Figure 25
BOOST IGBT
Figure 26
BOOST IGBT
Safe operating area as a function
of collectorꢀemitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
103
17,5
15
12,5
10
240V
102
960V
10uS
101
100uS
1mS
7,5
5
100
DC
10mS
10-1
2,5
0
100mS
0
25
50
75
100
125
150
175
200
100
103
101
102
VCE (V)
Qg (nC)
At
At
D =
single pulse
I C
=
40
A
T S
V GE
T j =
=
80
ºC
=
±15
T jmax
V
ºC
Figure 27
Output inverter IGBT
Figure 28
Output inverter IGBT
Short circuit withstand time as a function of
gateꢀemitter voltage
Typical short circuit collector current as a function of
gateꢀemitter voltage
t sc = f(V GE
)
V GE = f(Q GE)
17,5
350
15
12,5
10
300
250
200
150
100
50
7,5
5
2,5
0
0
12
13
14
15
16
17
18
19
20
12
13
14
15
16
17
18
19
20
VGE (V)
V GE(V)
At
At
V CE
=
1200
150
V
V CE
≤
1200
150
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
11
11 Sep. 2015 / Revision 3
VINCOTECH [ VINCOTECH ]
