V23990ꢀP629ꢀL48ꢀPM V23990ꢀP629ꢀL48YꢀPM
V23990ꢀP629ꢀL49ꢀPM V23990ꢀP629ꢀL49YꢀPM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
I C [A]
or
V GE [V]
or
T j [°C]
V CE [V] I F [A]
or
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Bypass Diode (D7,D8)
Forward voltage
25
125
25
125
25
125
25
0,7
1,15
1,11
0,92
0,82
0,009
0,012
1,4
V F
V to
r t
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
25
25
ꢁ
0,05
I r
1500
mA
125
phaseꢀchange
material
ʎ=3,4W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
1,67
Input Boost IGBT (T1,T2)
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
25
150
25
150
25
150
25
5,2
1,7
5,8
6,4
2,6
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V GE=V CE
0,0015
V
V
2,1
2,48
15
0
40
0,25
120
1200
0
mA
nA
ꢁ
20
150
none
25
150
25
150
25
150
25
150
25
150
25
35
34,2
26,4
27,2
372,2
430,8
9,4
69,8
2,061
2,19
1,78
3,039
Rise time
ns
t d(off)
t f
Turnꢀoff delay time
R goff=16 ꢁ
R gon=16 ꢁ
15
700
40
Fall time
E on
Turnꢀon energy loss
mWs
pF
E off
C ies
C oss
C rss
Q G
Turnꢀoff energy loss
150
Input capacitance
2360
230
125
192
Output capacitance
f=1MHz
f=1MHz
0
0
25
25
25
25
Reverse transfer capacitance
Gate charge
40
nC
phaseꢀchange
material
ʎ=3,4W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
0,84
Input Boost FWD (D1,D2,D4,D5)
Forward voltage
25
150
25
150
25
150
25
150
25
150
25
150
25
150
1
1,46
1,8
2
V F
I rm
10
40
V
µA
300
Reverse leakage current
1200
700
7,78
8,1
9,5
I RRM
Peak recovery current
A
t rr
Reverse recovery time
ns
9,5
0,04
0,04
0,002
0,002
2480
2790
Q rr
R gon=16 ꢁ
Reverse recovery charge
15
µC
E rec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
( di rf/dt )max
phaseꢀchange
material
ʎ=3,4W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
1,88
Input Boost Inv. Diode (D9,D10)
25
1,65
1,58
V F
Diode forward voltage
3
V
125
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
2,72
K/W
ʎ=3,4W/mK
copyright Vincotech
3
11 Sep. 2015 / Revision 3
VINCOTECH [ VINCOTECH ]
