V23990ꢀP590ꢀJ09ꢀPM / V23990ꢀP590ꢀJ19ꢀPM /
V23990ꢀP600ꢀI09ꢀPM / V23990ꢀP600ꢀI19ꢀPM
datasheet
Brake Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
3000
3000
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dirr/dt
i
i
i
i
dir r
/dt
i
i
i
i
2500
2000
1500
1000
500
2500
2000
1500
1000
500
0
0
0
5
10
15
20
25
30
35
Rg on (Ω)
0
20
40
60
80
100
120
140
160
IC (A)
600
±15
4
V
V
ꢂ
600
±15
75
V
At
VCE
=
At
VCE
VGE
I C
=
:
:
125 °C
V
A
125 °C
VGE
=
=
T j
=
T j
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
IC = f(V CE
)
160
IC MAX
I
I
I
I
140
120
100
80
I
I
I
I
I
I
I
I
60
40
20
V
V
V
V
0
0
200
400
600
800
1000
1200
1400
VC E (V)
At
150
°C
ꢂ
Tj
=
4
4
R gon =
R goff =
ꢂ
Copyright Vincotech
15
14 Aug. 2015 / Revision 2
VINCOTECH [ VINCOTECH ]
